GaAs Films Prepared by RF-Magnetron Sputtering.

Ouyang, L. H. ; Rode, D. L. ; Zulkifli, T. ; Abraham-Shrauner, B. ; Lewis, N. ; Freeman, M. R.

Technical Information Center Oak Ridge Tennessee

关键词: Gallium arsendies;    Sputtering;    Epitaxial growth;    Optical properties;    Microstructure;   

RP-ID  :  DE2004821684

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

The authors reported on the optical absorption, adhesion, and microstructure of RF-magnetron sputtered films of hydrogenated amorphous and microcrystalline GaAs films for the 1 to 25(micro)m infrared wavelength rate. Sputtering parameters which were varied include sputtering power, temperature and pressure, and hydrogen sputtering-gas concentration. TEM results show a sharp transition from purely amorphous GaAs to a mixture of microcrystalline GaAs in an amorphous matrix at 34(+-) 2 C. By optimizing the sputtering parameters, the optical absorption coefficient can be decreased below 100 cm(sup -1) for wavelengths greater than about 1.25(micro)m. These results represent the lowest reported values of optical absorption for sputtered films of GaAs directly measured by spectrophotometry for the near-infrared wavelength region.