Exploring Waveguiding Properties of Heavily Doped $ \hbox{Yb}^{3+}:\hbox{KLu}(\hbox{WO}_{4})_{2}$ Epitaxial Layers

IEEE Photonics Journal

Francesc Díaz¹  Magdalena Aguiló¹  Joan J. Carvajal¹  Xavier Mateos¹  Western Bolaños² 

[1] Fis. i Cristal Iografia de Mater. i Nanomater. (FiCMA-FiCNA), Univ. Rovira i Virgili (URV), Tarragona, Spain;Física i Cristal lografía de Materials i Nanomaterials (FiCMA-FiCNA), Universitat Rovira i Virgili (URV), Tarragona, Spain;

关键词: Epitaxial growth;    dielectric films;    optical planar waveguides;   

DOI  :  10.1109/JPHOT.2010.2050580

来源: DOAJ

【 摘 要 】

High-quality epitaxial layers of heavily doped $\hbox{Yb:KLu}( \hbox{WO}_{4})_{2}$ grown on $\hbox{KLu}(\hbox{WO}_{4})_{2}$ substrates by liquid phase epitaxy were characterized in terms of lattice mismatch and refractive indexes of the layer and the substrate. The effective refractive indexes of the guided modes that these structures can support were modeled and measured experimentally for the transverse electric (TE) and transverse magnetic (TM) mode excitation by dark m-lines spectroscopy. The upper limit for optical losses in these waveguides corresponding only to scattering processes was estimated to be $\sim$1.5 dB/cm at $\lambda = 632.8\ \hbox{nm}$. These results show that, apart for highly efficient thin-disk laser applications, these epilayers can be used as waveguide devices at wavelengths different from those used to excite $\hbox{Yb}^{3+}$.

【 授权许可】

Unknown