科技报告详细信息
| Epitaxial Growth of BGaAs and BGaInAs by MOCVD: Preprint. | |
| Geisz, J. F. | |
| Technical Information Center Oak Ridge Tennessee | |
| 关键词: Meetings; Epitaxial growth; Solar cells; Alloys; Chemical vaport deposition; | |
| RP-ID : DE200215000022 | |
| 学科分类：工程和技术（综合） | |
| 美国|英语 | |
| 来源: National Technical Reports Library | |
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【 摘 要 】
Presented at the 2001 NCPV Program Review Meeting: Comparison of use of TMB, TEB, and BF3 to diborane for MOCVD growth of BGaInAs.
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| DE200215000022.pdf | 216KB |  download |
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