Influence of Al/Si atomic ratio on optical and electrical properties of magnetron sputtered Al1-xSixOy coatings

THIN SOLID FILMS

卷:669

Article

Costa, P.¹  Al-Rjoub, A.¹  Rebouta, L.¹  Manninen, N. K.²  Alves, D.²  Almeida, B.^1,3  Barradas, N. P.⁴  Alves, E.⁵ 

[1] Univ Minho, Ctr Phys, Campus Azurem, P-4800058 Guimaraes, Portugal

[2] Bosch Car Multimedia Portugal SA, Rua Max Grundig 35, Braga, Portugal

[3] Univ Minho, QuantaLab, Campus Gualtar, P-4710057 Braga, Portugal

[4] Inst Super Tecn, Ctr Ciencias & Tecnol Nucl, EN 10,Km 139-7, P-2695066 Bobadela Lrs, Portugal

[5] Inst Super Tecn, Campus Tecnol & Nucl, EN 10,Km 139-7, P-2695066 Bobadela Lrs, Portugal

关键词: Sputtering;    Aluminum silicon oxide;    Optical properties;    Dielectric properties;    Electrical conductivity;   

DOI  :  10.1016/j.tsf.2018.11.036

来源: Elsevier

【 摘 要 】

This work presents a study on the influence of the Al/Si atomic ratio in dc magnetron sputtered Al1-xSixOy amorphous and transparent films upon their chemical composition, films' structure, optical and electrical properties. Increasing silicon in Al1-xSixOy films, from 0 at% up to 31.1 at.%, caused an increment of deposition rate and an increment in Al-O-Si energy bonds as confirmed by X-Ray Photoelectron Spectroscopy (XPS) analysis. On other hand, the optical constants (refractive index (n) and extinction coefficient (k)), dielectric constant, loss tangent (tan delta) and ac conductivity (sigma(ac)) decrease when the amount of silicon in films increased. The results show that the refractive index shows small variations from linearity with vol% of Al2O3 (or SiO2). Dielectric constant and dielectric loss evidenced two dipolar contributions, attributed to defects located one at or near the substrate/oxide interface, and the other in the bulk of the oxide.

【 授权许可】

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