Thin films of Ti-Cr-Al-O are produced for use as an electrical resistor material. The films are rf sputter deposited from ceramic targets using a reactive working gas mixture of Ar and O(sub 2). Vertical resistivity values from 10(sup 4) to 10(sup 10) Ohm-cm are measured for Ti-Cr-Al-O films. The film resistivity can be design selected through control of the target composition and the deposition parameters. The Ti-Cr-Al-O thin film resistor is found to be thermally stable unlike other metal-oxide films.