Intrinsic and extrinsic resistive switching in a planar diode based on silver oxide nanoparticles

THIN SOLID FILMS

卷:522

Article

Gomes, Henrique L.¹  Rosa da Costa, Ana M.²  Moreira, Jose A.²  de Leeuw, Dago M.³  Meskers, Stefan C. J.⁴ 

[1] Univ Algarve, FCT, Inst Telecomunicacoes, P-8005139 Faro, Portugal

[2] Univ Algarve, Ctr Invest Quim Algarve, P-8005139 Faro, Portugal

[3] Philips Res Labs, NL-5656 AE Eindhoven, Netherlands

[4] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands

关键词: Nanoparticles;    Resistive switching;    Non-volatile memory;   

DOI  :  10.1016/j.tsf.2012.08.041

来源: Elsevier

【 摘 要 】

Resistive switching is investigated in thin-film planar diodes using silver oxide nanoparticles capped in a polymer. The conduction channel is directly exposed to the ambient atmosphere. Two types of switching are observed. In air, the hysteresis loop in the current-voltage characteristics is S-shaped. The high conductance state is volatile and unreliable. The switching is mediated by moisture and electrochemistry. In vacuum, the hysteresis loops are symmetric, N-shaped and exhibit a negative differential resistance region. The conductance states are non-volatile with good data retention, programming cycling endurance and large current modulation ratio. The switching is attributed to electroforming of silver oxide clusters. (C) 2012 Elsevier B.V. All rights reserved.

【 授权许可】

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