Bulletin of the Korean chemical society | |
Non-stoichiometric AlOx Films Prepared by Chemical Vapor Deposition Using Dimethylaluminum Isopropoxide as Single Precursor and Their Non-volatile Memory Characteristics | |
Byung Kook Lee1  Seok Hwan Kim1  Sun Sook Lee1  Ki-Seok An1  Eun-Seok Lee1  Jin Ha Hwang1  Taek-Mo Chung1  Seok Jong Jeong1  Chang Gyoun Kim1  | |
关键词: Non-stoichiometric AlOx; Dimethylaluminum isopropoxide (DMAI); Single precursor; - Hydrogen elimination; Non-volatile memory; | |
DOI : | |
学科分类:化学(综合) | |
来源: Korean Chemical Society | |
【 摘 要 】
Dimethylaluminum isopropoxide (DMAI, (CH3)2AlOiPr) as a single precursor, which contains one aluminum and one oxygen atom, has been adopted to deposit non-stoichiometric aluminum oxide (AlOx) films by low pressure metal organic chemical vapor deposition without an additional oxygen source. The atomic concentration of Al and O in the deposited AlOx film was measured to be Al:O = ~1:1.1 and any serious interfacial oxide layer between the film and Si substrate was not observed. Gaseous by-products monitored by quadruple mass spectrometry show that β-hydrogen elimination mechanism is mainly contributed to the AlOx CVD process of DMAI precursor. The current-voltage characteristics of the AlOx film in Au/AlOx/Ir metalinsulator- metal (MIM) capacitor structure show high ON/OFF ratio larger than ~106 with SET and RESET voltages of 2.7 and 0.8 V, respectively. Impedance spectra indicate that the switching and memory phenomena are based on the bulk-based origins, presumably the formation and rupture of filaments.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201912010243902ZK.pdf | 376KB | download |