MOCVD of GaN Films on Si Substrates Using a New Single Precursor

Bulletin of the Korean chemical society

Yunsoo Kim¹  Seonmi Song¹  Soon-Bo Lee¹  Sun Sook Lee¹  Taek-Mo Chung¹  Chang Gyoun Kim¹  Seung Ho Yu¹ 

关键词: Azidodiethylgallium methylamine adduct;    Hexagonal gallium nitride;    Metal organic chemical vapor deposition;    Single precursor;   

DOI  :  

学科分类：化学（综合）

来源: Korean Chemical Society

【 摘 要 】

Hexagonal GaN (h-GaN) films have been grown on Si(111) substrates by metal organic chemical vapor deposition using the azidodiethylgallium methylamine adduct, Et2Ga(N3)】NH2Me, as a new single precursor. Deposition was carried out in the substrate temperature range 385-650 ∑C. The GaN films obtained were stoichiometric and did not contain any appreciable amounts of carbon impurities. It was also found that the GaN films deposited on Si(111) had the [0001] preferred orientation. The photoluminescence spectrum of a GaN film showed a band edge emission peak characteristic of h-GaN at 378 nm.

【 授权许可】

Unknown