Chemical Vapor Deposition of Ga2O3 Thin Films on Si Substrates

Bulletin of the Korean chemical society

Seung Ho Yoo¹  Yunsoo Kim¹  Ki-Seok An¹  Taek-Mo Chung¹  Hee-Soo Yoo¹  Doo Hyun Kim¹ 

关键词: Gallium oxide;    Metal organic chemical vapor deposition;    Single precursor;    Gallium isopropoxide.;   

DOI  :  

学科分类：化学（综合）

来源: Korean Chemical Society

【 摘 要 】

Amorphous Ga₂O₃ films have been grown on Si(100) substrates by metal organic chemical vapor deposition (MOCVD) using gallium isopropoxide, Ga(Oⁱ Pr)₃, as single precursor. Deposition was carried out in the substrate temperature range 400-800 �?. X-ray photoelectron spectroscopy (XPS) analysis revealed deposition of stoichiometric Ga₂O₃ thin films at 500-600 �?. XPS depth profiling by Ar⁺ ion sputtering indicated that carbon contamination exists mostly in the surface region with less than 3.5% content in the film. Microscopic images of the films by scanning electron microscopy (SEM) and atomic force microscopy (AFM) showed formation of grains of approximately 20-40 nm in size on the film surfaces. The root-mean-square surface roughness from an AFM image was ~10�?. The interfacial layer of the Ga₂O₃/Si was measured to be ~35�? thick by cross-sectional transmission electron microscopy (TEM). From the analysis of gaseous products of the CVD reaction by gas chromatography-mass spectrometry (GC-MS), an effort was made to explain the CVD mechanism.

【 授权许可】

Unknown