Double subband occupation of the two-dimensional electron gas in InxAl1-xN/AlN/GaN/AlN heterostructures with a low indium content (0.064≤x≤0.140) barrier

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Article

Lisesivdin, S. B.^1,2  Tasli, P.²  Kasap, M.²  Ozturk, M.¹  Arslan, E.¹  Ozcelik, S.²  Ozbay, E.^1,3,4 

[1] Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey

[2] Gazi Univ, Fac Sci & Arts, Dept Phys, TR-06500 Ankara, Turkey

[3] Bilkent Univ, Dept Phys, TR-06800 Ankara, Turkey

[4] Bilkent Univ, Dept Elect & Elect Engn, TR-06800 Ankara, Turkey

关键词: Indium aluminum nitride;    Metal organic chemical vapor deposition;    Two dimensional electron gas;    Hall effect;   

DOI  :  10.1016/j.tsf.2010.04.120

来源: Elsevier

【 摘 要 】

We present a carrier transport study on low indium content (0.064 <= x <= 0.140) InxAl1-xN/AlN/GaN/AlN heterostructures. Experimental Hall data were carried out as a function of temperature (33-300 K) and a magnetic field (0-1.4 T). A two-dimensional electron gas (2DEG) with single or double subbands and a two-dimensional hole gas were extracted after implementing quantitative mobility spectrum analysis on the magnetic field dependent Hall data. The mobility of the lowest subband of 2DEG was found to be lower than the mobility of the second subband. This behavior is explained by way of interface related scattering mechanisms, and the results are supported with a one-dimensional self-consistent solution of non-linear Schrodinger-Poisson equations. (C) 2010 Elsevier B.V. All rights reserved.

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