Nanocrystallized tetragonal metastable ZrO2 thin films deposited by metal-organic chemical vapor deposition for 3D capacitors

THIN SOLID FILMS

卷:519

Article

Brunet, M.¹  Kotb, H. Mafhoz²  Bouscayrol, L.¹  Scheid, E.¹  Andrieux, M.³  Legros, C.³  Schamm-Chardon, S.⁴ 

[1] Univ Toulouse, CNRS, LAAS, F-31077 Toulouse, France

[2] Univ Assiut, Dept Phys, Fac Sci, Assiut 71516, Egypt

[3] Univ Paris 11, LEMHE ICMMO, CNRS, UMR 8182, F-91405 Orsay, France

[4] Univ Toulouse, NMat Grp, CEMES CNRS, F-31055 Toulouse, France

关键词: Metal organic chemical vapor deposition;    Zirconium oxide;    Tetragonal;    High dielectric constant;    3D capacitors;    Transmission electron microscopy;    Electrical properties and measurements;   

DOI  :  10.1016/j.tsf.2011.03.006

来源: Elsevier

【 摘 要 】

ZrO2 is a potential candidate for the realization of 3D capacitors on silicon for future Systems-on-Chip. This paper reports on the deposition of ZrO2 thin films by metal-organic chemical vapor deposition on planar and 3D structures. Physico-chemical as well as electrical properties of the films are investigated. It is shown that the change of phase and microstructure of the film due to annealing at 900 degrees C under O-2 impacts directly on the electrical performance of the capacitors. Capacitance densities are 2 nF/mm(2) for planar capacitors and reach 8 nF/mm(2) for capacitors with pores etched in silicon with a 4:1 aspect ratio. (C) 2011 Elsevier B.V. All rights reserved.

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