Amorphous thin GeSbTe phase-change films prepared by radical-assisted metal-organic chemical vapor deposition

THIN SOLID FILMS

卷:583

Article

Fujisaki, Yoshihisa¹  Sasago, Yoshitaka¹  Kobayashi, Takashi¹ 

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

关键词: Phase change;    Metal organic chemical vapor deposition;    Non-volatile memory;    Chalcogenide;    Germanium-antimony-tellurium;    Three-dimensional structures;   

DOI  :  10.1016/j.tsf.2015.03.034

来源: Elsevier

【 摘 要 】

Amorphous thin Ge2Sb2Te5 filmswere deposited by MOCVD (metal organic chemical vapor deposition) on three-dimensional structures. Ammonium gas, used as a reactant, reduced the deposition temperature to 150 degrees C, which is lower than that of metal-organic precursors. Introducing nitrogen and hydrogen radicals made by decomposition of the ammonium gas further reduced the growth temperature. The lowest growth temperature producing a realistic growth rate was 100 degrees C. Phase-change memory cells made of MOCVD-grown films were confirmed to have operation and reliability characteristics as good as those of conventional cells made of sputter-deposited films. (C) 2015 Central Research Laboratory, Hitachi, Ltd. Published by Elsevier B.V.

【 授权许可】

Free