Atomic Layer Deposition of Zirconium Oxide on Carbon Nanoparticles

International Conference on Functional Materials and Nanotechnologies 2013

材料科学;物理学

Tamm, A.^1 ; Peikolainen, A.-L.^2 ; Kozlova, J.^1 ; Aarik, L.^1 ; Roosalu, K.^1 ; Kärkkänen, I.^3 ; Mandar^1 ; Aarik, J.^1 ; Kukli, K.^1,4

University of Tartu, Institute of Physics, Department of Materials Science, Riia 142, EE-51014 Tartu, Estonia^1

IMS Lab, Institute of Technology, University of Tartu, Nooruse 1, EE-50411 Tartu, Estonia^2

Peter Grünberg Institut, Forschungszentrum Jülich, Leo-Brandt Strasse, 52425 Jülich, Germany^3

University of Helsinki, Department of Chemistry, PO Box 55, FI-00014, Helsinki, Finland^4

关键词: Carbon Nano-Particles;    Electrical characterization;    Flat-band voltage shift;    Non-volatile memory;    Organic solutions;    Polycondensation reactions;    Substrate temperature;    Tunnel oxides;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/49/1/012019/pdf
DOI  :  10.1088/1757-899X/49/1/012019

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

In this report we describe preparation of structures containing carbon nanoparticles for potential applications in nonvolatile memories. The carbon nanoparticles were synthesized from 5-methylresorcinol and formaldehyde via base catalysed polycondensation reaction, and were distributed over substrates by dip-coating the substrates into an organic solution. Before deposition of nanoparticles the substrates were covered with 2 nm thick Al2O3layer grown by atomic layer deposition (ALD) from Al(CH3)3and O3. After deposition of nanoparticles the samples were coated with ZrO2films grown from C5H5Zr[N(CH3)2]3and H2O. Both dielectrics were grown in two-temperature ALD processes starting deposition of Al2O3at 25 °C and ZrO2at 200 °C, thereafter completing both processes at a substrate temperature of 300 °C. Deposition of ZrO2changed the structure of C-nanoparticles, which still remained in a Si/Al2O3/C/ZrO2structure as a separate layer. Electrical characterization of nanostructures containing Al2O3as tunnel oxide, C-nanoparticles as charge traps and ZrO2as control oxide showed hysteretic flat-band voltage shift of about 1V.