Electric, dielectric and optical properties of Ga2O3 grown by metal organic chemical vapour deposition

19th International School on Condensed Matter Physics: Advances in Nanostructured Condensed Matter: Research and Innovations

Paskaleva, A.^1 ; Spassov, D.^1 ; Terziyska, P.^1

Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, Sofia

1784, Bulgaria^1

关键词: Dielectric and optical properties;    Electrical characterization;    Flat-band voltage shift;    Metal organic chemical vapour depositions;    Metal-oxide- semiconductorcapacitors;    Relative dielectric permittivity;    Spectroscopic ellipsometry measurements;    Wide band-gap material;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/794/1/012017/pdf
DOI  :  10.1088/1742-6596/794/1/012017

来源: IOP

【 摘 要 】

Thin film (15-130 nm) of gallium oxide were grown by the industry relevant metal organic chemical vapour deposition (MOCVD) technique on p-type Si to check the possibility for integration of newly rediscovered wide bandgap material with the Si technology. Electric, dielectric and optical properties were studied and analyzed. To perform electrical characterization, Ga2O3films were integrated into Al/Ga2O3/p-Si metal-oxide-semiconductor (MOS) capacitors. Relative dielectric permittivity, flat-band voltage shift and effective oxide charge density were obtained from C-V measurements. Spectroscopic ellipsometry measurements reveal that Ga2O3deposited by MOCVD is a direct bandgap material with a large optical bandgap of about 5.1 eV. Both ellipsometrical and electrical results show formation of a thick interfacial SiO2.