Simulation of non-volatile memory cell using chalcogenide glasses

JOURNAL OF ALLOYS AND COMPOUNDS

卷:536

Article

Rocca, J.¹  Fontana, M.¹  Arcondo, B.¹ 

[1] Univ Buenos Aires, CONICET, Fac Ingn, INTECIN,Lab Solidos Amorfos, RA-1063 Buenos Aires, DF, Argentina

关键词: Numerical simulation;    Non-volatile memory;    Chalcogenide glasses;    GeSbTe system;   

DOI  :  10.1016/j.jallcom.2012.01.052

来源: Elsevier

【 摘 要 】

In this paper, a non-volatile memory cell of Te-based chalcogenide material is proposed and modeled. It is formed by layers of three materials: an insulating material, a conductor and a sensitive material: Te-based chalcogenide material. A 2D model using a finite element method has been developed for the simulation of the thermal behaviour of the cell. Temporal evolution of temperature maps is obtained. The model is applied to alloys of the Ge-Sb-Te system. The computed results allow us to understand the role played by the variables involved (thickness of different layers, cell radius, composition of the chalcogenide glass) in order to optimize the cell structure. (c) 2012 Elsevier B.V. All rights reserved.

【 授权许可】

Free