Resistive switching in TiO2 nanocolumn arrays electrochemically grown

Applied Nanotechnology and Nanoscience International Conference 2016

Marik, M.^1 ; Mozalev, A.^1 ; Hubalek, J.^1 ; Bendova, M.^1

CEITEC-Central European Institute of Technology, Brno University of Technology, Purkynova 123, Brno

61200, Czech Republic^1

关键词: Conducting filament;    Formation condition;    Non-volatile memory;    Porous anodic alumina;    Resistive switching;    Resistive switching behaviors;    Substoichiometric oxide;    Working mechanisms;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/829/1/012001/pdf
DOI  :  10.1088/1742-6596/829/1/012001

来源: IOP

【 摘 要 】

Resistive switching in metal oxides, especially in TiO2, has been intensively investigated for potential application in non-volatile memory microdevices. As one of the working mechanisms, a conducting filament consisting of a substoichiometric oxide phase is created within the oxide layer. With the aim of investigating the filament formation in spatially confined elements, we fabricate arrays of self-ordered TiO2nanocolumns by porous-anodic-alumina (PAA)-assisted anodizing, incorporate them into solid-state microdevices, study their electron transport properties, and reveal that this anodizing approach is suitable for growing TiO2nanostructures exhibiting resistive switching. The electrical properties and resistive switching behavior are both dependent on the electrolytic formation conditions, influencing the concentration and distribution of oxygen vacancies in the nanocolumn material during the film growth. Therefore, the PAA-assisted TiO2nanocolumn arrays can be considered as a platform for investigating various phenomena related to resistive switching in valve metal oxides at the nanoscale.