Evolution of resistive switching with switching cycles in Pt/BiFeO3/NiO/Pt memory cell

2nd International Symposium on Application of Materials Science and Energy Materials

材料科学;能源学

Luo, Jinming^1

School of Physics and Optical Information Sciences, Jiaying University, Meizhou, China^1

关键词: Chemical solution deposition method;    Conducting filament;    Current voltage curve;    Perovskite structures;    Resistive switching;    Switching cycles;    Switching voltages;    Thin film quality;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/490/2/022027/pdf
DOI  :  10.1088/1757-899X/490/2/022027

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

BiFeO3/NiO heterostructure is prepared using chemical solution deposition method. The X-ray result indicates that a perovskite structure has been formed in this thin film, and the images of cross-section and surface show a good thin film quality. The current-voltage curves with switching cycles have also been measured in Pt/BiFeO3/NiO/Pt structure, and two steps of resistive switching can be clearly observed. According to the analysis of resistances and switching voltages in these two steps, the evolution of resistive switching with switching cycles can be demonstrated by conducting filament mechanism.