Analysis of the Mosaic Defects in Graded and Non Graded InxGa1-xN Solar Cell Structures

Süleyman Demirel Üniversitesi Fen Bilimleri Enstitüsü Dergisi

卷:21

Mustafa Kemal ÖZTÜRK¹  Süleyman ÖZÇELİK¹  Ekmel ÖZBAY¹  İlknur KARS DURUKAN² 

[1] ;

[2] Gazi Üniversitesi;

关键词: InGaN/GaN;    Solar cell;    MOCVD;    HRXRD;    UV;    XRD;   

DOI  :  10.19113/sdufbed.58096

来源: DOAJ

【 摘 要 】

In this study, graded (A) In_xGa_1-xN (10.5 ≤ x ≤ 18.4) and non graded (B) In_xGa_1-xN (13.6 ≤ x ≤ 24.9) samples are grown on c-oriented sapphire substrate using the Metal Organic Chemical Vapour Deposition (MOCVD) technique. The structural, optical and electrical features of the grown InGaN/GaN solar cell structures are analyzed using High Resolution X-Ray Diffraction (HRXRD), Photoluminescense (PL), Ultraviolet (UV), current density and potential (JV) measurements. According to the HRXRD results; it is determined that the InGaN layer of the graded structure has a lower FWHM (Full width at half maximum) value. From the PL measurements, it is observed that the GaN half-width peak value of the graded sample is narrower and the InGaN peak width value of the graded sample is larger. From UV measurements, that the graded sample has a greater band range. JV measurements determine that the performance of the graded structure is higher.

【 授权许可】

Unknown