Preparation of ZnO Thin Films Using Zn/O-containing Single Precursor through MOCVD Method

Bulletin of the Korean chemical society

Kang Min Ok¹  Jae Young Park¹  Il Wun Shim¹  Sin Kyu Kim¹  Jong Pil Park¹ 

关键词: ZnO thin film;    MOCVD;    Precursor;    Solar cell;   

DOI  :  

学科分类：化学（综合）

来源: Korean Chemical Society

【 摘 要 】

A new Zn/O single source precursor, TMEDA-Zn(eacac)2, has been synthesized by using N, N, N�?, N�?-tetramethylethylendiamine (TMEDA), sodium ethyl-acetoacetate, and ZnCl2. From this organometallic precursor, ZnO thin films have been successfully grown on Si (100) substrates through the metal organic chemical vapor deposition (MOCVD) method at relatively mild conditions in the temperature range of 390~430 ∑C. The synthesized ZnO films have been found to possess average grain sizes of about 70 nm with an orientation along the c-axis. The precursor and ZnO films are characterized through infrared spectroscopy, nuclear magnetic resonance spectroscopy, EI-FAB-spectroscopy, elemental analyses, thermal analysis, X-ray diffraction, and field emission scanning electron microscopic analyses.

【 授权许可】

Unknown