Preparation of Zinc Oxide (ZnO) Thin Film as Transparent Conductive Oxide (TCO) from Zinc Complex Compound on Thin Film Solar Cells: A Study of O2 Effect on Annealing Process

2nd Materials Research Society of Indonesia Meeting

Muslih, E.Y.^1,2 ; Kim, K.H.^3

Physical Metallurgy Laboratory, Mechanical Engineering Department, Faculty of Industrial Technology, Trisakti University, Jalan Kyai Tapa No. 1, Grogol, Jakarta

11440, Indonesia^1

Nano Center Indonesia, Jalan Raya Bogor KM 47, Cibinong, Bogor

16912, Indonesia^2

School of Material Science and Engineering, Yeungnam University, 214-1 Daedong, Gyeongsan, Gyeongbuk

712-749, Korea, Republic of^3

关键词: Ambient atmosphere;    Annealing process;    N-type semiconductors;    Optical and electrical properties;    Reaction mechanism;    Transparent conductive oxides;    Zinc oxide (ZnO);    ZnO thin film;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/214/1/012001/pdf
DOI  :  10.1088/1757-899X/214/1/012001

来源: IOP

【 摘 要 】

Zinc oxide (ZnO) thin film as a transparent conductive oxide (TCO) for thin film solar cell application was successfully prepared through two step preparations which consisted of deposition by spin coating at 2000 rpm for 10 second and followed by annealing at 500 °C for 2 hours under O2and ambient atmosphere. Zinc acetate dehydrate was used as a precursor which dissolved in ethanol and acetone (1:1 mol) mixture in order to make a zinc complex compound. In this work, we reported the O2effect, reaction mechanism, structure, morphology, optical and electrical properties. ZnO thin film in this work shows a single phase of wurtzite, with n-type semiconductor and has band gap, carrier concentration, mobility, and resistivity as 3.18 eV, 1.21 × 10-19cm3, 11 cm2/Vs, 2.35 × 10-3Ωcm respectively which is suitable for TCO at thin film solar cell.