The application of zinc oxide layer as ethylene sensor

International Seminar on Metallurgy and Materials

Sholehah, A.^1^2 ; Pusparasmi, D.A.^1^2 ; Yuliarto, B.^3

Advanced Material and Tomography Laboratory, Faculty of Engineering, Universitas Sultan Ageng Tirtayasa, Jl. Jend. Sudirman Km 3, Cilegon, Banten

42435, Indonesia^1

Departement of Metallurgical Engineering, Faculty of Engineering, Universitas Sultan Ageng Tirtayasa, Jl. Jend. Sudirman Km 3, Cilegon, Banten

42435, Indonesia^2

Departement of Engineering Physics, Faculty of Industrial Technology, Institut Teknologi Bandung, Jl. Ganesha No. 10, Jawa Barat, Bandung

41032, Indonesia^3

关键词: Annealing process;    Closed chambers;    Electrodeposition methods;    Ethylene gas;    Ethylene sensors;    Hydrothermal treatments;    N-type semiconductors;    Sensor performance;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/541/1/012051/pdf
DOI  :  10.1088/1757-899X/541/1/012051

来源: IOP

【 摘 要 】

As an emerging n-type semiconductor, ZnO has been widely applied in sensor area. In this study, we prepared an ethylene sensor using ZnO layer on FTO glass substrate. The seed layer was deposited using simple electrodeposition method using voltage of -1.1 V for 2 hours in cold bath (6°C). The ZnO layer was further grown using CBD technique at 90°C for 2 hours. In order to observe the effect of structural manipulation on the sensor performance, some of the ZnO layer samples were undergoing hydrothermal treatment at 100°C for 1 hour under 1 bar N2 gas. After annealing process, all ZnO layers were exposed with 50 ppm ethylene gas in closed chamber. Based on the results, it is shown that the optimum ZnO layer has been successfully identified the ethylene gas in concentration of 50 ppm, with response value of 2.40% at 200°C.