Band gap and conductivity variations of ZnO nano structured thin films annealed under Vacuum

International Conference on Materials Science and Technology 2012

Vattappalam, Sunil C^1 ; Thomas, Deepu^1,2 ; Raju, Mathew T.^1 ; Augustine, Simon^1 ; Mathew, Sunny^1

Department of Physics, St.Thomas College, Pala-Kottayam

686574, India^1

Research and Development Centre, Bharathiar University, Coimbatore

641046, India^2

关键词: Conductivity variation;    Nanostructured thin film;    SILAR method;    Successive ionic layer adsorption and reactions;    Zinc oxide thin films;    ZnO thin film;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/73/1/012107/pdf
DOI  :  10.1088/1757-899X/73/1/012107

来源: IOP

【 摘 要 】

Zinc Oxide thin films were prepared by Successive Ionic layer adsorption and reaction technique(SILAR). The samples were annealed under vacuum and conductivity of the samples were taken at different temperatures. UV Spectrograph of the samples were taken and the band gap of each sample was found from the data. All the results were compared with that of the sample annealed under air. It was observed that the band gap decreases and concequently conductivity of the samples increases when the samples are annealed under vacuum.