Low Cost Production of InGaN for Next-Generation Photovoltaic Devices

Nick M. Sbrockey, Shangzhu Sun, Gary S. Tompa,

关键词: COMPATIBILITY;    DEPOSITION;    NITRIDES;    PRODUCTION;    SUBSTRATES;    THIN FILMS InGaN;    GaN;    solar cells;    thin films;    high efficiency;    MOCVD;    HVPE;   

DOI  :  10.2172/1046340
RP-ID  :  DOE/EE0003493-1
PID  :  OSTI ID: 1046340
Others  :  TRN: US201215%%444

学科分类：材料科学（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

The goal of this project is to develop a low-cost and low-energy technology for production of photovoltaic devices based on InGaN materials. This project builds on the ongoing development by Structured Materials Industries (SMI), of novel thin film deposition technology for Group III-Nitride materials, which is capable of depositing Group-III nitride materials at significantly lower costs and significantly lower energy usage compared to conventional deposition techniques. During this project, SMI demonstrated deposition of GaN and InGaN films using metalorganic sources, and demonstrated compatibility of the process with standard substrate materials and hardware components.