Photoconductivity of InGaN/GaN multiple quantum well heterostructures

15th Russian Youth Conference on Physics and Astronomy

物理学;天文学

Baranovskiy, M.V.^1 ; Glinskii, G.F.^1

Department of Micro- and Nanoelectronics, Saint Petersburg Electrotechnical University, LETI, 197376, St.-Petersburg, Russia^1

关键词: Blue light;    Different mechanisms;    InGaN/GaN;    Negative differential conductivities;    Quantum well heterostructures;    Reverse bias;    Violet region;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/461/1/012039/pdf
DOI  :  10.1088/1742-6596/461/1/012039

学科分类：天文学(综合)

来源: IOP

【 摘 要 】

Photocurrent and photoconductivity of InGaN/GaN multiple quantum well heterostructures as a function of applied reverse bias is investigated. Optical excitation was carried out in blue and violet regions of the spectrum, and temperature was ranging from 10 to 300 K. We observed characteristic features related to consequently moving space charge boundary through the quantum wells. For each quantum well there is a range of reverse bias with negative differential conductivity when excited by blue light. Frequency and temperature measurements revealed the presence of at least two different mechanisms that determine the photoconductivity of the structures.