Two Dimensional Numerical Simulator for Modeling NDC Region in SNDC Devices

27th IUPAP Conference on Computational Physics

物理学;计算机科学

Sinha, Dheeraj Kumar^1 ; Chatterjee, Amitabh^1 ; Trivedi, Gaurav^1

Department of Electronics and Electrical Engineering, Indian Institute of Technology Guwahati, Assam

781039, India^1

关键词: Current filaments;    Device simulators;    Dirichlet and Neumann boundary conditions;    IV characteristics;    MATLAB environment;    Negative differential conductivities;    Numerical simulators;    Self-organization phenomenon;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/759/1/012099/pdf
DOI  :  10.1088/1742-6596/759/1/012099

学科分类：计算机科学（综合）

来源: IOP

【 摘 要 】

This paper deals about making a numerical simulator for observing the self-organization phenomenon like current filament formation in the negative differential conductivity (NDC) region of operation in a device using MATLAB environment. Emphasis is laid on choosing the appropriate boundary conditions in simulator to observe the NDC part of the device Current-Voltage (I - V) characteristics along with the appropriate isothermal physical models are included for mobility and the recombination-generation. The simulator used in this paper is designed to observe NDC region in S-shaped NDC (SNDC) devices like BJT and similar conditions can be used to observe the field domains in the N-shaped NDC (NNDC) devices with appropriate changes. Dirichlet and Neumann boundary conditions are applied to BJT and I - V characteristics of the developed device simulator are compared with the commercial available TCAD device simulator (i.e., Sentaurus).