Luminescence peculiarities of InGaN/GaN dichromatic LEDs

18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Arteev, D.S.^1 ; Sakharov, A.V.^1 ; Nikolaev, A.E.^1 ; Usov, S.O.^1 ; Lundin, W.V.^1 ; Tsatsulnikov, A.F.^1

Ioffe Institute, Politekhnicheskaya 26, St-Petersburg

194021, Russia^1

关键词: Doping levels;    Emission peaks;    InGaN/GaN;    Intensity ratio;    LED structure;    Luminescence measurements;    Shorter wavelength;    Wavelength emission;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/816/1/012038/pdf
DOI  :  10.1088/1742-6596/816/1/012038

来源: IOP

【 摘 要 】

The series of InAlGaN LED structures containing two different quantum wells emitting at wavelengths of ∼ 430 nm and ∼ 490 nm was grown. The influence of the quantum wells order, thickness of the barrier between the wells and its doping level on the optical properties was studied by photo- and electro-luminescence measurements. It was found that the quantum well with longer-wavelength emission is preferable to be located farther from a player than the shorter-wavelength quantum well to obtain emission from both QWs. Variation of the thickness of the barrier between the QWs and its doping level allows controlling the intensity ratio of two emission peaks.