SiC Power MOSFET with Improved Gate Dielectric

Sbrockey, Nick M ; Tompa, Gary S ; Spencer, Michael G ; Chandrashekhar, Chandra MVS

关键词: SiC;    MOSFET;    gate dielectric;    ALD;    thin films;    MOCVD;   

DOI  :  10.2172/1067486
RP-ID  :  DOE-STRUCTURED MATERIALS-ER86288
PID  :  OSTI ID: 1067486

学科分类：材料科学（综合）

美国|英语

来源: SciTech Connect

【 摘 要 】

In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.