SiC gate-controlled bipolar-field-effect composite transistor with large on-state current

Micro & nano letters

article

Baoxing Duan¹  Yipan Zhang¹  Ziming Dong¹  Yintang Yang¹ 

[1] Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University

关键词: MOSFET;    junction gate field effect transistors;    bipolar transistors;    wide band gap semiconductors;    silicon compounds;    semiconductor device breakdown;    on-state current;    gate-controlled voltage;    composite structure;    base–gate short connection mode;    base–source short connection mode;    parasitic bipolar transistor;    GCBT;    silicon carbide gate-controlled bipolar-field-effect composite transistor;    traditional silicon carbide VDMOS;    JFET region;    metal oxide semiconductor structure;    conductive channels;    breakdown mechanism;    parasitic BJT;    VDMOSFET;    voltage 800.0 V;    voltage 2.98 V;    SiC;   

DOI  :  10.1049/mnl.2019.0329

学科分类：计算机科学（综合）

来源: Wiley

【 摘 要 】

In this work, a novel bipolar-field-effect composite transistor based on silicon carbide (SiC) Vertical Double-diffused MOSFET (VDMOS) is proposed and investigated for the first time. The novel device is controlled by a gate and is a composite structure of a parasitic Bipolar Junction Transistor (BJT) and a Vertical Double-diffused MOSFET (VDMOSFET), called SiC GCBT (SiC Gate-Controlled Bipolar-field-effect composite Transistor). The structure features using the base–gate short connection mode, instead of the base–source short connection mode, as the traditional SiC VDMOS. So that two conductive channels can be provided by the parasitic bipolar transistor and the metal oxide semiconductor structure for the new device, which not only can improve the integration degreebut also greatly increases the on-state current while the breakdown mechanism remains unchanged. As simulation results show that, compared to the traditional SiC VDMOS with the same parameters, SiC GCBT has the identical BV (about 800 V) and a V th (2.98 V) that is reduced by a factor of 3, and its on-state current is 16.7 times larger than that of SiC VDMOS and is almost unaffected by the width of the Junction Field-Effect Transistor (JFET) region. In addition, under the same gate-controlled voltage, its switching speed can even be compared with that of the traditional SiC VDMOS.

【 授权许可】

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