Destruction of LED heterostructures under high-current electron beam irradiation

International Scientific and Technical Youth Conference "Perspective Materials of Constructional and Medical Purpose"

材料科学;医药卫生

Li, Zixuan^1 ; Xian, Jiyao^1 ; Sysoyeva, S.G.^1

National Research Tomsk Polytechnic University, 30 Lenin Ave., Tomsk

634050, Russia^1

关键词: Fracture morphology;    GaN layers;    High current electron beams;    InGaN/GaN;    Sapphire substrates;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/511/1/012004/pdf
DOI  :  10.1088/1757-899X/511/1/012004

来源: IOP

【 摘 要 】

This paper presents the experimental results of the fracture morphology of InGaN/GaN heterostructures and epitaxial GaN layers deposited on sapphire substrates after irradiation with high current electron beams. A special type of damage-microspheres, ∼1-5 μm was discovered and studied. The results show that the microspheres act as diffractive optical elements redistributing the stimulated emission of InGaN/GaN in space.