Non-alloyed ohmic Cr/Pt/Au contacts to GaN based structures

International Scientific and Practical Conference on Innovations in Engineering and Technology

工业技术;自然科学

Zhelannov, A.V.^1 ; Seleznev, B.I.^2

OKB-Planeta PLC, Fedorovskiy Ruchey 2/13, V. Novgorod

173004, Russia^1

Yaroslav-the-Wise Novgorod State University, B. Sankt-Petersburg str., 41, Novgo-rod-the-Great

173003, Russia^2

关键词: Diode structure;    GaN layers;    GaN-based structures;    Non-alloyed;    Ohmic behavior;    Specific contact resistances;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/441/1/012045/pdf
DOI  :  10.1088/1757-899X/441/1/012045

来源: IOP

【 摘 要 】

The study of non-alloyed ohmic contacts based on Cr/Pt/Au is presented. Metallization was made on the epitaxial (Sample A) and ion-doped (Sample B) GaN layers. The deposited Au/Pt/Cr/n-GaN contacts exhibited an ohmic behavior with specific contact resistance 2.8×106 Ω•cm2 and 3.5×107 Ω•cm2 for the samples A and B respectively. The diode structures were made using Cr/Pt/Au system.