会议论文详细信息
International Scientific and Practical Conference on Innovations in Engineering and Technology | |
Non-alloyed ohmic Cr/Pt/Au contacts to GaN based structures | |
工业技术;自然科学 | |
Zhelannov, A.V.^1 ; Seleznev, B.I.^2 | |
OKB-Planeta PLC, Fedorovskiy Ruchey 2/13, V. Novgorod | |
173004, Russia^1 | |
Yaroslav-the-Wise Novgorod State University, B. Sankt-Petersburg str., 41, Novgo-rod-the-Great | |
173003, Russia^2 | |
关键词: Diode structure; GaN layers; GaN-based structures; Non-alloyed; Ohmic behavior; Specific contact resistances; | |
Others : https://iopscience.iop.org/article/10.1088/1757-899X/441/1/012045/pdf DOI : 10.1088/1757-899X/441/1/012045 |
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来源: IOP | |
【 摘 要 】
The study of non-alloyed ohmic contacts based on Cr/Pt/Au is presented. Metallization was made on the epitaxial (Sample A) and ion-doped (Sample B) GaN layers. The deposited Au/Pt/Cr/n-GaN contacts exhibited an ohmic behavior with specific contact resistance 2.8×106 Ω•cm2 and 3.5×107 Ω•cm2 for the samples A and B respectively. The diode structures were made using Cr/Pt/Au system.
【 预 览 】
Files | Size | Format | View |
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Non-alloyed ohmic Cr/Pt/Au contacts to GaN based structures | 447KB | download |