THz photoluminescence from n-GaN layers at CW interband excitation

2nd Russia-Japan-USA Symposium on the Fundamental and Applied Problems of Terahertz Devices and Technologies

Andrianov, Alexander V.^1 ; Zakhar'In, Alexey O.^1 ; Bobylev, Alexander V.^1 ; Feng, Zhe C^2

A. F. Ioffe Physical Technical Institute, 194021, St. Petersburg, Russia^1

Institute of Material Research and Engineering, 119260 Singapore, Singapore^2

关键词: Continuous Wave;    GaN film;    GaN layers;    Inter-band excitations;    Interband photoexcitation;    Low temperatures;    Shallow donors;    Terahertz emissions;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/486/1/012033/pdf
DOI  :  10.1088/1742-6596/486/1/012033

来源: IOP

【 摘 要 】

We report on experimental observation and studies of terahertz emission from n-doped GaN films under continuous wave interband photoexcitation at low temperatures. Properties of the terahertz emission testify that the emission is caused by intracenter optical transitions in shallow donors of GaN. The THz intracenter optical transitions are initiated by the interband photoexcitation.