Intraband absorption and interband photoconductivity transients in Ge/Si quantum dots

18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Kirilenko, O.I.^1 ; Balagula, R.M.^1 ; Sofronov, A.N.^1 ; Firsov, D.A.^1 ; Vorobjev, L.E.^1

Peter the Great St.Petersburg Polytechnic University, Polytechnicheskaya 29, St.Petersburg

195251, Russia^1

关键词: Experimental curves;    Ge/si quantum dots;    Inter-band excitations;    Intraband absorptions;    Low temperatures;    Relaxation curves;    Simultaneous analysis;    Temperature range;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/816/1/012027/pdf
DOI  :  10.1088/1742-6596/816/1/012027

来源: IOP

【 摘 要 】

In this work a series of relaxation curves of photoinduced intraband absorption and interband photoconductivity were measured in Ge/Si quantum dots in the temperature range from 80 K to 300 K and at different levels of the interband excitation. The low-temperature experimental curves show a two-step decay of a population of quantum dots. At high temperatures there is only one decay component. A simultaneous analysis of photoinduced intraband absorption and interband photoconductivity relaxation curves shows that quantum dots act as traps for non-equilibrium holes only at low temperatures.