Improvements in the performance of the n+ cap-layer GaN in the formation of transistor structures based on AlGaN / GaN

International Scientific and Practical Conference on Innovations in Engineering and Technology

工业技术;自然科学

Zhelannov, A.V.^1 ; Seleznev, B.I.^2

OAO OKB-Planeta Russia, ul. Fyodorovskiy ruchei, 2/13, Veliky Novgorod

173004, Russia^1

Novgorod State University, ul. B. St. Petersburgskaya, 41, Veliky Novgorod

173003, Russia^2

关键词: AlGaN/GaN heterostructures;    GaN layers;    Heavily doped;    Maximum drain current;    Output power;    Protective layers;    Selective etching;    Transistor structure;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/441/1/012065/pdf
DOI  :  10.1088/1757-899X/441/1/012065

来源: IOP

【 摘 要 】

The use of heavily doped protective layers of gallium nitride in AlGaN/GaN heterostructures makes it possible to improve the characteristics of transistors. In this paper, using structures with a protective cap layer and the process of selective etching, structures of HEMT transistors are fabricated. Using the n+-GaN layer, remove the contact resistance from 1 Ω•mm to 0.74 Ω•mm. The transistors show a maximum drain current of 380mA/mm and a steepness of 140mS/mm with an output power of 5W/mm.