Terahertz emission from silicon nanostructures heavily doped with boron

2nd Russia-Japan-USA Symposium on the Fundamental and Applied Problems of Terahertz Devices and Technologies

Bagraev, Nikolay T.^1 ; Danilovskii, Eduard Yu^1 ; Gets, Dmitrii S.^1 ; Kaveev, Andrey K.^2 ; Klyachkin, Leonid E.^1 ; Kropotov, Grigorii I.^2 ; Kudryavtsev, Andrey A.^1 ; Kuzmin, Roman V.^1 ; Malyarenko, Anna M.^1 ; Mashkov, Vladimir A.^1 ; Tsibizov, Ivan A.^2 ; Tsypishka, Dmitrii I.^2 ; Vinerov, Ilya A.^2

Ioffe Physical Technical Institute, St. Petersburg, Russia^1

TYDEX, J.S.Co., Domostroitelnaya str. 16, 194292 St. Petersburg, Russia^2

关键词: Heavily doped;    P-type silicon;    Si(100) surface;    Silicon nano structures;    Terahertz emissions;    THz spectrum;    Ultra narrows;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/486/1/012017/pdf
DOI  :  10.1088/1742-6596/486/1/012017

来源: IOP

【 摘 要 】

We present the first findings of the terahertz emission from the ultra-narrow p-type silicon quantum well confined by the δ-barriers heavily doped with boron on the n-type Si (100) surface. The THz spectra revealed by the voltage applied along the Si-QW plane appear to result from the radiation of the dipole boron centers.