Surface morphology of RF plasma immersion H+ ion implanted and oxidized Si(100) surface

18th International Summer School on Vacuum, Electron and Ion Technologies

Anastasescu, M.^1 ; Stoica, M.^1 ; Gartner, M.^1 ; Bakalova, S.^2 ; Szekeres, A.^2 ; Alexandrova, S.^3

Institute of Physical Chemistry, Romanian Academy of Sciences, 202 Spl. Independentei, 060021 Bucharest, Romania^1

Acad. G. Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tsarigradsko Chaussee, 1784 Sofia, Bulgaria^2

Technical University of Sofia, 8 Kl. Ohridski Blvd., 1797 Sofia, Bulgaria^3

关键词: Amplitude parameters;    Ion implanted;    Oxidation temperature;    RMS roughness;    Si(100) surface;    Surface-roughening;    Technological conditions;    Thermal oxidation;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/514/1/012036/pdf
DOI  :  10.1088/1742-6596/514/1/012036

来源: IOP

【 摘 要 】

The surface morphology of p-Si(100) wafers after RF plasma immersion (PII) H+ion implantation into a shallow Si surface layer and after subsequent thermal oxidation was studied by atomic-force microscopic (AFM) imaging. After PII implantation of hydrogen ions with an energy of 2 keV and fluences ranging from 1013cm-2to 1015cm-2the Si wafers were oxidized in dry O2 at temperatures ranging from 700 °C to 800 °C. From the analysis of the AFM images, the surface amplitude parameters were evaluated and considered in terms of the technological conditions. The amplitude parameters showed a clear dependence on the H+dose and the oxidation temperature, with the tendency of increasing with the increase of both the H+ion fluence and the oxidation temperature. The implantation causes surface roughening, changing the RMS roughness value from 0.15 nm (typical for a polished Si(100) surface) to the highest value 0.6 nm for the H+fluence of 1015ions/cm2. Oxidation of the H+implanted Si region, as the oxide is growing inward into Si, levels away the pits created by implants and results in a smoother surface, although keeping the RMS values larger than 0.2 nm.