Terahertz reflection and emission associated with nonequilibrium surface plasmon polaritons in n-GaN

16th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Melentyev, G.A.^1 ; Shalygin, V.A.^1 ; Moldavskaya, M.D.^1 ; Panevin, V Yu^1 ; Vorobjev, L.E.^1 ; Firsov, D.A.^1 ; Nykänen, H.^2 ; Riuttanen, L.^2 ; Svensk, O.^2 ; Suihkonen, S.^2

Department of Physics of Semiconductors and Nanoelectronics, St. Petersburg Polytechnic University, Polytechnicheskaya 29, St.-Petersburg

195251, Russia^1

School of Electrical Engineering, Aalto University, Otakaari 1, Espoo

02150, Finland^2

关键词: GaN epitaxial layers;    Heavily doped;    Lateral electric field;    Luminescence spectrum;    Non equilibrium;    Spectral studies;    Surface plasmon polaritons;    Terahertz radiation;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/586/1/012005/pdf
DOI  :  10.1088/1742-6596/586/1/012005

来源: IOP

【 摘 要 】

Surface plasmon polaritons are investigated in heavily doped n-GaN epitaxial layers. The grating etched on the surface of the epitaxial layer is used to convert photons into the surface plasmon polaritons and vice versa. The spectral study of reflection demonstrates the possibility of nonequilibrium surface plasmon polaritons excitation due to terahertz radiation scattering on the grating. Terahertz electroluminescence is investigated under lateral electric field. The luminescence spectrum demonstrates a significant contribution of nonequilibrium surface plasmon polariton scattering to terahertz radiation emission.