Bulk plasmon-phonon polaritons in n-GaN

18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Orlov, E.Yu.^1 ; Melentev, G.A.^1 ; Shalygin, V.A.^1 ; Suihkonen, S.^2

Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya str., St. Petersburg

195251, Russia^1

School of Electrical Engineering, Aalto University, Otakaari 1, Espoo

02150, Finland^2

关键词: Dispersion relations;    Electron concentration;    Experimental spectra;    GaN epitaxial layers;    Phonon damping;    Phonon polaritons;    Reflectivity spectra;    Wide frequency range;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/816/1/012004/pdf
DOI  :  10.1088/1742-6596/816/1/012004

来源: IOP

【 摘 要 】

We studied theoretically and experimentally plasmon-phonon polaritons and longitudinal plasmon-phonon oscillations in n-GaN epitaxial layers. The studies were carried out on the epitaxial layers with various doping levels. Simulation of the reflectivity spectra and dispersion relations of plasmon-phonon polaritons was performed in a wide frequency range. Reflectivity spectra transformation associated with phonon damping and electron relaxation processes has been revealed. Experimental studies of the reflectivity spectra have been performed in the spectral range of 8-80 meV. The experimental spectra are well fitted by the simulated ones. Results of the study can be used for contactless determination of the electron concentration and mobility in GaN epitaxal layers.