Donor ionization tuning in AlGaAs/InGaAs/GaAs PHEMT quantum wells with AlAs nanolayers in spacer

2nd International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

Safonov, D.A.^1 ; Vinichenko, A.N.^1 ; Sibirmovsky, Yu.D.^1 ; Kargin, N.I.^1 ; Vasil'evskii, I.S.^1

National Research Nuclear University MEPhI, Moscow Engineering Physics Institute, Kashirskoe shosse 31, Moscow

115409, Russia^1

关键词: AlGaAs/InGaAs/GaAs;    Donor layers;    Electron concentration;    Ionized impurities;    Nano layers;    Si layer;    Silicon atoms;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/498/1/012031/pdf
DOI  :  10.1088/1757-899X/498/1/012031

来源: IOP

【 摘 要 】

A comparison of the electron transport properties of pseudomorphic quantum well AlxGa1-xAs/In0.2Ga0.8As/GaAs with those of conventional donor layer (x = 0.15 and x = 0.25) and with AlAs nanoinserts around the delta-Si layer or AlAs: delta-Si donor layer is presented. The structures with added AlAs layers exhibit electron concentration decrease, combined with increased electron mobility. This effect is related to the suppression of remote ionized impurity electron scattering, change of band structure and decreasing efficiency of silicon atoms doping when incorporating in pure AlAs.