Pseudomorphic HEMT quantum well AlGaAs/InGaAs/GaAs with AlAs:δ-Si donor layer

1st International Telecommunication Conference "Advanced Micro- and Nanoelectronic Systems and Technologies"

无线电电子学

Vinichenko, A.N.^1 ; Vasil'Evskii, I.S.^1

National Research Nuclear University, MEPhI (Moscow Engineering Physics Institute), Kashirskoe shosse 31, Moscow

115409, Russia^1

关键词: AlGaAs/InGaAs/GaAs;    Donor impurities;    Donor layers;    Doping efficiency;    Electron concentration;    Electron transport;    High electron mobility;    Pseudomorphic HEMT;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/151/1/012037/pdf
DOI  :  10.1088/1757-899X/151/1/012037

来源: IOP

【 摘 要 】

A comparison between the electron transport and optical properties of pseudomorphic high electron mobility quantum well with conventional AlGaAs donor layer and with AlAs delta-Si doped donor layer is presented. The structure with AlAs donor layer exhibits a mobility rise combined with the electron concentration decrease. We address this effect to the suppression of electron scattering on remote donor impurities and the decreased doping efficiency of Si atoms embedded in pure AlAs.