Correlation Effects of Localized Impurities on Electron Transport under 1-D Nano-Structures

19th International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures

Sano, N.^1 ; Zulhidza, M.R.^1 ; Kaneno, Y.^1 ; Honda, S.^1 ; Ueda, A.^1 ; Yoshida, K.^1

Institute of Applied Physics, University of Tsukuba, Tsukuba

305-8573, Japan^1

关键词: Correlation effect;    Electron transport;    Ionized impurities;    Localized impurity;    Nanowire structures;    Phase interference;    Phase randomizations;    Spatial correlations;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/647/1/012028/pdf
DOI  :  10.1088/1742-6596/647/1/012028

来源: IOP

【 摘 要 】

We investigate the spatial correlation effects of ionized impurities on electron transport properties under quasi-1D nanowire structures. The impurity-limited resistance is evaluated with the Landauer formula under various spatial distributions of impurities and the simulation results are theoretically analyzed. We show that phase interference is significant even at room temperature when the separation between impurities along the axis direction is small, whereas strong phase randomization takes place as the separation increases.