Excitation and decay of surface plasmon polaritons in n-GaN

33rd International Conference on the Physics of Semiconductors

Shalygin, V.A.^1 ; Melentev, G.A.^1 ; Vorobjev, L.E.^1 ; Panevin, V.Yu.^1 ; Firsov, D.A.^1 ; Korotyeyev, V.V.^2 ; Lyaschuk, Yu.M.^2 ; Kochelap, V.A.^2 ; Suihkonen, S.^3

Department of Physics of Semiconductors and Nanoelectronics, Peter the Great St. Petersburg Polytechnic University, St. Petersburg

195251, Russia^1

Department of Theoretical Physics, Institute of Semiconductor Physics NASU, Kyiv

03028, Ukraine^2

School of Electrical Engineering, Aalto University, Espoo

02150, Finland^3

关键词: Differential methods;    Explicit integration;    GaN epitaxial layers;    P-polarized radiation;    Surface plasmon polariton modes;    Surface plasmon polaritons;    Surface relief gratings;    Temperature modulation;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012073/pdf
DOI  :  10.1088/1742-6596/864/1/012073

来源: IOP

【 摘 要 】

We report on the studies of the surface plasmon polaritons in n-GaN epitaxial layers. The grating etched on the surface of the epitaxial layer is used to excite surface plasmon polaritons by means of terahertz photons. The experimental reflectivity spectrum for p-polarized radiation demonstrates a set of resonances associated with excitation of different surface plasmon polariton modes. Spectral peculiarities due to the diffraction effect have been also revealed. Emission of terahertz radiation is investigated under epilayer temperature modulation by electric current. The emissivity spectrum of the epitaxial layer with surface-relief grating shows peaks in the frequency ranges corresponding to the decay of the surface plasmon polariton modes. The characteristic features of the reflectivity and emissivity spectra are well described theoretically by a differential method with explicit integration scheme.