Measurements of doping density in InAs by capacitance-voltage techniques with electrolyte barriers

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Frolov, D.^1 ; Yakovlev, G.^1 ; Zubkov, V.^1

Department of Micro- and Nanoelectronics, St. Petersburg Electrotechnical University LETI, Prof. Popov str. 5, St. Petersburg

197376, Russia^1

关键词: Capacitance-voltage techniques;    Depletion approximation;    Doping concentration;    Doping densities;    Hall measurements;    Heavily doped;    Measurements of;    Thomas-Fermi approximation;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012086/pdf
DOI  :  10.1088/1742-6596/643/1/012086

来源: IOP

【 摘 要 】

The doping densities in n-InAs structures were studied by means of capacitance- voltage technique using electrolyte to form Schottky-like contact. It was shown that in heavily doped InAs (> 1018cm-3) the depletion approximation can be used to obtain the true doping concentration. Concentration in low doped InAs can be estimated by simulation (using modified Thomas-Fermi approximation). Measured doping densities were compared with concentration obtained by Hall measurements. The difference between CV and Hall results in undoped samples was explained.