Optical properties of GaAs/AlGaAs double quantum wells in lateral electric field

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Vinnichenko, M. Ya^1 ; Balagula, R.M.^1 ; Makhov, I.S.^1 ; Shumilov, A.A.^1 ; Firsov, D.A.^1 ; Vorobjev, L.E.^1

Peter the Great St. Petersburg Polytechnic University, 29 Polytechnicheskaya str., St. Petersburg

195251, Russia^1

关键词: Absorption and emissions;    Double quantum well;    Electron heating;    GaAs/AlGaAs quantum well;    Inter-subband;    Lateral electric field;    Near Infrared;    Quantum-well state;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012149/pdf
DOI  :  10.1088/1742-6596/741/1/012149

来源: IOP

【 摘 要 】

The influence of the lateral electric field on the mid-infrared intersubband light absorption and near-infrared interband photoluminescence is experimentally investigated in tunnel-coupled GaAs/AlGaAs quantum wells. Absorption and emission modulation in lateral electric field are related to the electron heating and redistribution of hot electrons between the quantum well states resulting in variation of the space charge in the structure.