The channeling effect of Al and N ion implantation in 4H-SiC during JFET integrated device processing

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

卷:365

Article

Lazar, M.¹  Laariedh, F.¹  Cremillieu, P.²  Planson, D.¹  Leclercq, J. -L.² 

[1] Univ Lyon, Lab AMPERE, INSA Lyon, CNRS,UMR 5005, F-69621 Villeurbanne, France

[2] Univ Lyon, Ecole Cent Lyon, Inst Nanotechnol Lyon, CNRS,UMR 5270, F-69134 Ecully, France

关键词: 4H-SiC;    Lateral JFET;    Ion implantation;    Channeling effect;    SIMS;   

DOI  :  10.1016/j.nimb.2015.07.033

来源: Elsevier

【 摘 要 】

A strong channeling effect is observed for the ions of Al and N implanted in 4H-SiC due to its crystalline structure. This effect causes difficulties in subsequent accurate estimation of the depth of junctions formed by multiple ion implantation steps. A variety of lateral JFET transistors integrated on the same 4H-SiC wafer have been fabricated. Secondary Ion Mass Spectrometry measurements and Monte-Carlo simulations were performed in order to quantify and control the channeling effect of the implanted ions. A technological process was established enabling to obtain devices working with the presence of the channeling effect. (C) 2015 Elsevier B.V. All rights reserved.

【 授权许可】

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