科技报告详细信息
| Relative Stability of Silicon Self-Interstitial Defects. | |
| Subramanian, G. ; Jones, K. S. ; Law, M. E. ; Caturla, M. J. ; Theiss, S. ; Diaz de la Rubia, T. | |
| Technical Information Center Oak Ridge Tennessee | |
| 关键词: Silicon; Crystal defects; Annealing; Dislocations; Ion implantation; | |
| RP-ID : DE200415007528 | |
| 学科分类：工程和技术（综合） | |
| 美国|英语 | |
| 来源: National Technical Reports Library | |
 PDF
|
|
【 摘 要 】
No abstract available.
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| DE200415007528.pdf | 320KB |  download |
878987797
028-85220240
