Distribution of D1 dislocation luminescence centers in Si+-implanted silicon and the photoluminescence model

Modern Electronic Materials

Elena I. Shek¹  Vladimir I. Pavlenkov²  David I. Tetelbaum³  Aleksey I. Belov³  Dmitry A. Pavlov³  Andrey N. Shushunov³  Aleksey N. Mikhaiylov³  Dmitry S. Korolev³  Aleksandr I. Bobrov³  Sergeyi N. Nagornykh⁴ 

[1] A.F. Ioffe Physical-Technical Institute of the Russian Academy of Sciences, 26 Politekhnicheskaya Street, St. Petersburg 194021, Russia;Arzamas Branch of the N. I. Lobachevsky Nizhny Novgorod State University, 36 K. Marx Street, Arzamas, Nizhny Novgorod Region 607220, Russia;Physical and Technical Research Institute at the N.I. Lobachevsky Nizhny Novgorod State University, 23 Building 3, Gagarin Avenue, Nizhny Novgorod 603950, Russia;R.E. Alekseev Nizhny Novgorod State Technical University, 24 Minin Street, Nizhny Novgorod 603950, Russia;

关键词: Silicon;    Ion implantation;    Dislocations;    Dislocation luminescence;    Photoluminescence model;   

DOI  :  10.1016/j.moem.2015.11.007

来源: DOAJ

【 摘 要 】

Using step-by-step removal of silicon layers, in which dislocation-related photoluminescence is observed after Si+ (100 keV, 1·1015 cm−2) ion implantation followed by high-temperature annealing in a chlorine containing atmosphere, it has been found that a majority of dislocation-related centers of luminescence at ~1.5 μm (D1 line) is localized at the depths of Si+ ion ranges. Cross-sectional electron microscopy shows that the dislocations introduced by the implantation treatment (implantation plus annealing) penetrate to depths of ~1 μm. A phenomenological model of the D1-line dislocation-related luminescence is developed based on the assumption that the K-centers and modified A-centers located in the atmospheres of dislocations are responsible for this luminescence line. The temperature dependence of luminescence intensity calculated on the basis of the model fits well the experimental data for the D1 line.

【 授权许可】

Unknown