Defect Diffusion during Annealing of Low-Energy Ion-Implanted Silicon.

Bedrossian, P. J. ; Caturla, M. J. ; Diaz de la Rubia, T.

Technical Information Center Oak Ridge Tennessee

关键词: Annealing;    Defects;    Diffusion;    Silicon;    Interstitials;   

RP-ID  :  DE200415008103

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

We present a new approach for investigating the kinetics of defect migration during annealing of low-energy, ion-implanted silicon, employing a combination of computer simulations and atomic-resolution tunneling microscopy. Using atomically-clean Si(111)-7x7 as a sink for bulk point defects created by 5 keV Xe and Ar irradiation, we observe distinct, temperature-dependent surface arrival rates for vacancies and interstitials. A combination of simulation tools provides a detailed description of the processes that underly the observed temperature-dependence of defect segregation, and the predictions of the simulations agree closely with the experimental observations.