Characterization of Al2O3/4H-SiC and Al2O3/SiO2/4H-SiC MOS structures

Bulletin of the Polish Academy of Sciences. Technical Sciences

K. KosielInstitute of Electron Technology, 32/46 Lotników Av., 02-668 Warsaw, PolandOther articles by this author:De Gruyter OnlineGoogle Scholar¹  A. TaubeCorresponding authorInstitute of Electron Technology, 32/46 Lotników Av., 02-668 Warsaw, PolandInstitute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa St., 00-662 Warsaw, PolandEmailOther articles by this author:De Gruyter OnlineGoogle Scholar¹  M. GuziewiczInstitute of Electron Technology, 32/46 Lotników Av., 02-668 Warsaw, PolandOther articles by this author:De Gruyter OnlineGoogle Scholar¹  A. PiotrowskaInstitute of Electron Technology, 32/46 Lotników Av., 02-668 Warsaw, PolandOther articles by this author:De Gruyter OnlineGoogle Scholar¹  K. Go?aszewska-MalecInstitute of Electron Technology, 32/46 Lotników Av., 02-668 Warsaw, PolandOther articles by this author:De Gruyter OnlineGoogle Scholar¹  R. KruszkaInstitute of Electron Technology, 32/46 Lotników Av., 02-668 Warsaw, PolandOther articles by this author:De Gruyter OnlineGoogle Scholar¹  E. Kami?skaInstitute of Electron Technology, 32/46 Lotników Av., 02-668 Warsaw, PolandOther articles by this author:De Gruyter OnlineGoogle Scholar¹  K. KrólInstitute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa St., 00-662 Warsaw, PolandOther articles by this author:De Gruyter OnlineGoogle Scholar² 

[1] Institute of Electron Technology, 32/46 Lotników Av., 02-668 Warsaw, Poland;Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, 75 Koszykowa St., 00-662 Warsaw, Poland

关键词: Keywords: aluminum oxide;    MOS;    silicon carbide;    4H-SiC;    high-κ dielectrics;   

DOI  :  10.1515/bpasts-2016-0061

学科分类：工程和技术（综合）

来源: Polska Akademia Nauk * Centrum Upowszechniania Nauki / Polish Academy of Sciences, Center for the Advancement of Science

【 摘 要 】

The paper presents the results of characterization of MOS structures with aluminum oxide layer deposited by ALD method on silicon carbide substrates. The effect of the application of thin SiO2 buffer layer on the electrical properties of the MOS structures with Al2O3 layer has been examined. Critical electric field values at the level of 7.5–8 MV/cm were obtained. The use of 5 nm thick SiO2 buffer layer caused a decrease in the leakage current of the gate by more than two decade of magnitude. Evaluated density of trap states near the conduction band of silicon carbide in Al2O3/4H-SiC MOS is about of 1×1013 eV−1cm−2. In contrast, the density of the trap states in the Al2O3/SiO2/4H-SiC structure is lower about of one decade of magnitude i.e. 1×1012 eV−1cm−2. A remarkable change in the MOS structure is also a decrease of density of electron traps located deeply in the 4H-SiC conduction band below detection limit due to using of the SiO2 buffer layer.

【 授权许可】

Unknown