Effect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition

Materials

Shuxian Cai¹  Zhonghua Liu¹  Ni Zhong¹  Shengbei Liu²  Xingfang Liu² 

[1] National Research Center of Engineering Technology for Utilization of Functional Ingredients from Botanicals, Hunan Agriculture University, Changsha 410128, China; E-Mails:;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China; E-Mail:

关键词: face dependences;    epitaxial graphene;    chemical vapor deposition;    4H-SiC;    growth pressure;   

DOI  :  10.3390/ma8095263

来源: mdpi

【 摘 要 】

The Si(0001) face and C(000-1) face dependences on growth pressure of epitaxial graphene (EG) grown on 4H-SiC substrates by ethene chemical vapor deposition (CVD) was studied using atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman). AFM revealed that EGs on Si-faced substrates had clear stepped morphologies due to surface step bunching. However, This EG formation did not occur on C-faced substrates. It was shown by μ-Raman that the properties of EG on both polar faces were different. EGs on Si-faced substrates were relatively thinner and more uniform than on C-faced substrates at low growth pressure. On the other hand, D band related defects always appeared in EGs on Si-faced substrates, but they did not appear in EG on C-faced substrate at an appropriate growth pressure. This was due to the μ-Raman covering the step edges when measurements were performed on Si-faced substrates. The results of this study are useful for optimized growth of EG on polar surfaces of SiC substrates.

【 授权许可】

CC BY   
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