Local electric field screening in bi-layer graphene devices

Frontiers in Physics

Yakimova, Rositsa¹  Kazakova, Olga²  Lartsev, Arseniy³  Panchal, Vishal³  Giusca, Cristina⁴ 

[1] Chalmers Technical University, Gothenburg, Sweden;Linkoping University, Linkoping, Sweden;National Physical Laboratory, Quantum Detection, London, United Kingdom;Royal Holloway University of London, Egham, United Kingdom

关键词: epitaxial graphene;    scanning gate microscopy;    single-layer graphene;    double-layer graphene;    electrical gating;   

DOI  :  10.3389/fphy.2014.00003

学科分类：物理（综合）

来源: Frontiers

【 摘 要 】

We present experimental studies of both local and macroscopic electrical effects in uniform single- (1LG) and bi-layer graphene (2LG) devices as well as in devices with non-uniform graphene coverage, under ambient conditions. DC transport measurements on sub-micron scale Hall bar devices were used to show a linear rise in carrier density with increasing amounts of 2LG coverage. Electrical scanning gate microscopy was used to locally top gate uniform and non-uniform devices in order to observe the effect of local electrical gating. We experimentally show a significant level of electric field screening by 2LG. We demonstrate that SGM technique is an extremely useful research tool for studies of local screening effects, which provides a complementary view on phenomena that are usually considered only within a macroscopic experimental scheme.

【 授权许可】

CC BY